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FJP5304D -- NPN Silicon Transistor
July 2008
FJP5304D NPN Silicon Transistor
High Voltage High Speed Power Switch Application
* * * * Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time
Equivalent Circuit C
B
1
E
TO-220 2.Collector 3.Emitter
1.Base
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB IBP PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse) Collector Dissipation (TC=25C) Storage Temperature Parameter Value 700 400 12 4 8 2 4 70 - 65 ~ 150 Units V V V A A A A W C
* Pulse Test Pulse Width = 5ms, Duty Cycle 1.0%
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCE = 700V, VEB = 0 VCE = 400V, IB = 0 VEB = 12V, IC = 0 Min. 700 400 12 100 250 100 Typ. Max. Units V V V mA mA mA
(c) 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A
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FJP5304D -- NPN Silicon Transistor
hFE VCE(sat)
DC Current Gain Collector-Emitter Saturation Voltage
VCE = 5V, IC = 10mA VCE = 5V, IC = 2A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IF = 2A
10 8
40 0.7 1.0 1.5 1.1 1.2 1.3 2.5 V
VBE(sat)
Base-Emitter Saturation Voltage
V
Vf
Internal Diode Forward Voltage Drop
V
Inductive Load Switching (VCC = 200V) tstg tf Storage Time Fall Time IC = 2A, IB1 = 0.4A VBE(off) = -5V, L = 200H 0.6 0.1 s
Resistive Load Switching (VCC = 250V) tstg tf Storage Time Fall Time IC = 2A, IB1 = IB2 = 0.4A TP = 30s 2.9 0.2 s
* Pulse test: PW300s, Duty cycle2%
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 1.78 62.5 Units C/W C/W
(c) 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A
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FJP5304D -- NPN Silicon Transistor
Typical Characteristics
5
100
IC[A], COLLECTOR CURRENT
4
hFE,DC CURRENT GAIN
3
IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA
Vce=5V
Ta=125 C 25 C -25 C
10
o o o
2
IB = 50mA
1
0 0 1 2 3 4 5 6 7 8
IB = 0
9 10
1 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
10
VCE(sat)[V],SATURATION VOLTAGE
Ic=5IB
25 C
O
10
1
VBE[V],SATURATION VOLTAGE
Ic=5IB
Ta=125 C -25 C
0.1
O
O
1
-25 C 25 C Ta=125 C
O O
O
0.01 0.01
0.1
1
10
0.1 0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
1000
VCC = 250V IC = 5IB1 = -5IB2
tSTG tSTG
1
tSTG, tF [ns], TIME
tSTG, tF [s], TIME
100
tF
0.1
tF
0.01 0.1
1
10
10 0.1
VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1
1 10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Resitive Load Switching Time
Figure 6. Inductive Load Switching Time
(c) 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A
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FJP5304D -- NPN Silicon Transistor
Typical Characteristics (Continued)
100
TC=25 C
o
100
IC[A], COLLECTOR CURRENT
10
IC[A], COLLECTOR CURRENT
Vcc=50V, IB1=1A, IB2 = -1A L = 1mH
10
1s 10s
1
1ms
DC
0.1
1
0.1
0.01 10
100
1000
0.01 10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Forward Bias Safe Operating Area
Figure 2. Reverse Bias Safe Operating Area
100
PC[W], POWER DISSIPATION
80
60
40
20
0 0 25 50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
Figure 3. Power Derating
(c) 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A
www.fairchildsemi.com 4
FJP5304D -- NPN Silicon Transistor
Mechanical Dimensions
TO220
(c) 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A
www.fairchildsemi.com 5
FJP5304D NPN Silicon Transistor
(c) 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A
www.fairchildsemi.com 6

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